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  ts13003 high voltage npn transistor 1/6 version: g11 to - 92 to - 126 product summary bv ceo 400v bv cbo 700v i c 1.5a v ce(sat) 1v @ i c =0.5a, i b =0.1a features high voltage high speed switching block diagram structure silicon triple diffused type npn silicon transistor ordering information part no. package packing ts13003ct b0 to-92 1kpcs / bulk ts13003ct b0g to-92 1kpcs / bulk ts13003ct a3 to-92 2kpcs / ammo ts13003ct a3g to-92 2kpcs / ammo ts13003ck b0 to-126 1kpcs / bulk note: g denote for halogen free absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 700v v collector-emitter voltage v ceo 400v v emitter-base voltage v ebo 9 v collector current dc i c 1.5 a pulse 3 total power dissipation @ tc= 25 o c to-92 p tot 1.5 w to-126 30 operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to ambient thermal resistance to-92 r ? ja 122 o c/w to-126 90 pin definition : 1. emitter 2. collector 3. base
ts13003 high voltage npn transistor 2/6 version: g11 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static collector-base voltage i c = 1ma, i b = 0 bv cbo 700 -- -- v collector-emitter breakdown voltage i c = 10ma, i e = 0 bv ceo 400 -- -- v emitter-base breakdown voltage i e = 1ma, i c = 0 bv ebo 9 -- -- v collector cutoff current v cb = 700v, i e = 0 i cbo -- -- 1 ua emitter cutoff current v eb = 9v, i c = 0 i ebo -- -- 1 ua collector-emitter saturation voltage * i c / i b = 0.5a / 0.1a i c / i b = 1.0a / 0.25a i c / i b = 1.5a / 0.5a v ce(sat)1 v ce(sat)2 v ce(sat)3 -- -- -- 0.25 0.5 1.2 0.5 1 3 v base-emitter saturation voltage * i c / i b = 0.5a / 0.1a i c / i b = 1.0a / 0.25a v be(sat)1 v be(sat)2 -- -- -- -- 1 1.2 v dc current gain * v ce = 5v, i c = 10ma v ce = 10v, i c = 400ma v ce = 2v, i c = 1a h fe 6 20 6 -- -- -- 40 40 35 dynamic characteristics frequency v ce = 10v, i c = 0.1a f t 4 -- -- mhz output capacitance v cb = 10v, f = 0.1mhz cob -- 21 -- pf resistive load switching time (ratings) delay time v cc = 125v, i c = 1a, i b1 = i b2 = 0.2a, t p = 25us duty cycle 1% t d -- 0.05 0.2 us rise time t r -- 0.5 1 us storage time t stg -- 2 4 us fall time t f -- 0.4 0.7 us * note : pulse test: pulse width 300us, duty cycle 2%
ts13003 high voltage npn transistor 3/6 version: g11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. v ce(sat) v.s. v be(sat figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
ts13003 high voltage npn transistor 4/6 version: g11 to-92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-92 dimension dim millimeters inches min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 13.53 (typ) 0.532 (typ) d 0.39 0.49 0.015 0.019 e 1.18 1.28 0.046 0.050 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.050 0.051 h 0.33 0.43 0.013 0.017
ts13003 high voltage npn transistor 5/6 version: g11 to-126 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code to-126 dimension dim millimeters inches min max min max 1 -- 3oc -- 3oc 2 -- 3oc -- 3oc 3 -- 3oc -- 3oc 4 -- 3oc -- 3oc a 0.150 0.153 3.81 3.91 b 0.275 0.279 6.99 7.09 c 0.531 0.610 13.50 15.50 d 0.285 0.303 7.52 7.72 e 0.034 0.041 0.95 1.05 f 0.028 0.031 0.71 0.81 g 0.048 0.052 1.22 1.32 h 0.170 0.189 4.34 4.80 i 0.095 0.105 2.41 2.66 j 0.045 0.055 1.14 1.39 k 0.045 0.055 1.14 1.39 l -- 0.021 -- 0.55 m 0.137 0.152 3.50 3.86
ts13003 high voltage npn transistor 6/6 version: g11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.


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